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| CMUT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAminiTM surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: FC2 SOT-523 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA 60 60 5.0 600 250 -65 to +150C 500 C/W UNITS V V V mA mW ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125C VCE=30V, VBE=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA 75 100 100 100 50 300 60 60 5.0 0.4 1.6 1.3 2.6 MIN MAX 10 10 50 UNITS nA A nA V V V V V V V R3 (9-February 2010) CMUT2907A SURFACE MOUNT PNP SILICON TRANSISTOR SYMBOL fT Cob Cib ton td tr toff ts tf ELECTRICAL CHARACTERISTICS - Continued: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, VCC=6.0V, IC=150mA, VCC=6.0V, IC=150mA, IB1=15mA IB1=15mA IB1=15mA 200 MAX 8.0 30 45 10 40 100 80 30 UNITS MHz pF pF ns ns ns ns ns ns IB1=IB2=15mA IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: FC2 R3 (9-February 2010) w w w. c e n t r a l s e m i . c o m |
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